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savantic semiconductor product specification silicon npn power transistors 2SC3680 d escription with to-3pn package high voltage switching transistor applications switching regulator and general purpose applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 900 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7 v i c collector current 7 a i cm collector current-peak 14 a i b base current 3.5 a p c collector power dissipation t c =25 120 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3680 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 800 v v cesat collector-emitter saturation voltage i c =3a ,i b =0.6a 0.5 v v besat base-emitter saturation voltage i c =3a ;i b =0.6a 1.2 v i cbo collector cut-off current v cb =800v; i e =0 100 a i ebo emitter cut-off current v eb =7v; i c =0 100 a h fe dc current gain i c =3a ; v ce =4v 10 30 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 105 pf f t transition frequency i c =2a ; v ce =12v 6 mhz switching times t on turn-on time 1.0 s t stg storage time 5.0 s t f fall time i c =3a;i b1 =0.45a; i b2 =-1.5a;r l =83 c v cc =250v 1.0 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC3680 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC3680

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